报告人简介： 

  Jianhua Hao is a Full Professor and Associate Head of Department of Applied Physics in the Hong Kong Polytechnic University (PolyU). He received his BSc, MSc and PhD at Huazhong University of Science and Technology, China. After working at Penn State University, USA, University of Guelph, Canada and the University of Hong Kong, Jianhua Hao joined the faculty in PolyU in 2006. Jianhua Hao has published more than 200 SCI papers. He has been listed as one of Most Cited Scientists in Materials Science. He is also the first inventor of several US patents. In Hong Kong, Jianhua Hao has been PI in 14 external competitive grants from main funding sources for research (9 RGC GRF, 3 ITF and 2 NSFC), and Co-PI in 1 RGC CRF. He serves as Editorial Board Member/Senior Editor for several international journals, such as Scientific Reports（NPG）and Advanced Optical Materials (Wiley). He is now Vice-President of Physical Society of Hong Kong (2015-2017). He has been General Chair/Session Chair/Organizing Committee Member for various international conferences. He was also invited to give a number of Keynote/Invited Lectures in various international conferences. Jianhua Hao’s research interests include (1) Luminescence and phosphors for photonic, energy and biomedical applications; (2) Functional thin-films, two-dimensional layered materials and heterostructures (Hao research group website: http://ap.polyu.edu.hk/apjhhao/). 

报告摘要： 

  In my talk, I will introduce two aspects of my group’s recent works in nanomaterials and nanotechnology. Firstly, luminescent ions doped materials have been widely applied in many areas. The utilization of a broad range of luminescent ions can be considered for a wide variety of applications. We have developed various metal-ions doped materials for photonic, energy and biological applications. Secondly, the ultimate goal of making nanoscale electronic and optoelectronic devices greatly stimulates atomically thin material and heterostructure research. We have deposited wafer-scale a-black phosphorus (BP) ultrathin films and two-dimensional (2D) layered materials by pulsed laser deposition. Transport and optical properties of the atomically thin materials are studied. We have developed a novel graphene field-effect transistor (GFET) based on vertical tunneling heterostructures with the complementary structures possessing the features of both ferroelectricity and conventional GFET.