报告题目：Advances in imaging and quantification of electrical properties at the nanoscale using Scanning Microwave Impedance Microscopy (sMIM)

报告人：Yongliang Yang (Senior Staff Scientist) recent Post Doc Stanford University

报告时间：2016 年 4月 7日上午 9:00 ，下午答疑及演示

报告地点： Amphitheatre on the third floor of research building, NCNST（纳米中心科研楼三层阶梯教室）

联系人：何小月 （电话：82545970）

摘要：

Scanning Microwave Impedance Microscopy (sMIM) is a mode for Atomic Force Microscopy (AFM) enabling imaging of unique contrast mechanisms and measurement of local permittivity and conductivity at the 10’s of nm length scale. sMIM has been applied to a variety of systems including nanotubes, nanowires, 2D materials, photovoltaics and semiconductor devices. Early results were largely semi-quantitative. This talk will focus on techniques for extracting quantitative physical parameters such as permittivity, conductivity, doping concentrations and thin film properties from sMIM data. Particular attention will be paid to non-linear materials where sMIM has been used to acquire nano-scale capacitance-voltage curves. These curves can be used to identify the dopant type (n vs p) and doping level in doped semiconductors, both bulk samples and devices.

报告人简介：

Dr. Yongliang Yang received his B.S. Degree from Peking University and Ph. D. degree from Shanghai Institute of Microsystem and Information Technology, Chinese Academic of Sciences. From 2010 to 2014, he worked as Post-doc at Stanford University, developing scanning microwave impedance microscopy (sMIM) technology and use the sMIM study the electrical properties of materials. In 2014, Dr Yang joined in PrimeNano Inc. as a senior staff scientist, working on the sMIM development and applications. He has more than 40 publications on top journal and conferences in the field.

补充：

    EFM/SKM主要是扫描表面主要是表征电场梯度和表面电势的。sMIM主要表征的电容和电导率，从测量的数据上来看可以和SCM以及CAFM/SSRM对应起来。

    和传统SCM相比，sMIM-C拥有更好的电学分辨率以及灵敏度。现场可以给演示sMIM-C和SCM的对比结果，sMIM可以分辨率出更多的区域。

    和传统CAFM/SSRM相比，sMIM-R不仅可以对导体和半导体，更是可以对绝缘体进行电导率的测试。尤其是一些做在不导电基底上的样品，CAFM/SSRM是无法测试的，除非转移到导电的衬底了。

    另外需要强调的是sMIM由于是微波照射样品，因此具备一定的穿透能力，也可以比传统上述电学测试方法测到更深。

文章链接：https://web2.ph.utexas.edu/~lailab/publications.html

 http://pubs.acs.org/doi/abs/10.1021/nl501782e